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Features
l . Low VCE(sat) Trench IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175oC
l . Enlarged Diode for regenerative operation
l . Isolated copper baseplate using DBC technology
l . High power and thermal cycling capability
Typical Applications
l . High Power Converter
l . Wind Power
l . Auxiliary Inverter
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC= 100oC |
1604 1000 |
A |
|
ICM |
Pulsed Collector Current tp= 1ms |
2000 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
6.25 |
kW |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
|
IF |
Diode Continuous Forward Current |
1000 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
2000 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +150 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
