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Features
l . High short circuit capability, self limiting to 6*IC
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Latch-up free
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DCB technology
Typical Applications
l . UPS
l . Switching mode power supplies
l . Electronic welders at fSW up to 25kHz
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD100HFK60C1S |
Units |
|
VCES |
Collector-Emitter Voltage |
600 |
V |
|
VGES |
Gate-Emitter Voltage |
±20V |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
130 |
A |
|
100 |
|||
|
ICM(1) |
Pulsed Collector Current @ TC=80℃ |
200 |
A |
|
IF |
Diode Continuous Forward Current |
100 |
A |
|
IFM |
Diode Maximum Forward Current |
200 |
A |
|
PD |
Maximum power Dissipation @ Tj=150℃ |
450 |
W |
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
TJ |
Operating Junction Temperature |
-40 to +150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value, Diode |
VR=0V, t=10ms, Tj=125℃ |
1250 |
A2s |
|
VISO |
Isolation Voltage RMS, f=50Hz, t=1min |
2500 |
V |
|
Mounting Torque |
Power Terminal Screw:M5 |
2.5 to 5.0 |
N.m |
|
Mounting Screw:M6 |
3.0 to 6.0 |
N.m |
