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600V-650V

GD100HFT60C1S, IGBT module

IGBT module,GD100HFT60C1S, 600V/100A,Electronic welders at fSW up to 25kHz,SMPS,Inductive heating
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Description Drawing

Features

. Low VCE(sat) trench IGBT technology

. 5μs short circuit capability

. VCE(sat) with positive temperature coefficient

. Maximum junction temperature 175℃

. Low inductance case

. Fast & soft reverse recovery anti-parallel FWD

. Isolated copper baseplate using DBC technology

Typical Applications

. Electronic welders

. Switching mode power supplies

. Uninterruptible power supply

Absolute Maximum Ratings TC=25 unless otherwise noted

Symbol

Description

GD100HFT60C1S

Units

VCES

Collector-Emitter Voltage

600

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25

@ TC=80

160

100

A

ICM(1)

Pulsed Collector Current  tp=1ms

200

A

IF

Diode Continuous Forward Current  @ TC=80

100

A

IFM(1)

Diode Maximum Forward Current  tp=1ms

200

A

PD

Maximum Power Dissipation  @ Tj=175

417

W

Tjmax

Maximum Junction Temperature

175

TSTG

Storage Temperature Range

-40 to +125

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Mounting Torque

Power Terminal Screw:M5

Mounting Screw:M6

2.5 to 5.0

3.0 to 5.0

N.m



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