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Features
l . Low VCE(sat) NPT IGBT technology
l . 10μs short circuit capability
l . Square RBSOA
l . VCE(sat) with positive temperature coefficient
l . Fast & soft reverse recovery anti-parallel FWD
Typical Applications
l . Inverter for motor drive
l . AC and DC servo drive amplifier
l . Uninterruptible power supply
IGBT
|
Symbol |
Description |
GD10PJK60F3S |
Units |
|
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
600 |
V |
|
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
20 10 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
20 |
A |
|
Ptot |
Total Power Dissipation @ Tj=150℃ |
79 |
W |
Diode
|
Symbol |
Description |
GD10PJK60F3S |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
600 |
V |
|
IF |
DC Forward Current |
10 |
A |
|
IFRM |
Repetitive Peak Forward Current tp=1ms |
20 |
A |
Module
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
|
|
V |
|
RθJC |
Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake-chopper) Junction-to-Case (per Diode-brake-chopper) |
|
|
1.571 3.096 1.624 1.768 3.394 |
K/W |
