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Features
l . Low VCE(sat) Trench IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . AlSiC baseplate for high power cycling capability
l . AlN substrate for low thermal resistance
Typical Applications
l . High Power Converters
l . Motor Drivers
l . Wind Turbines
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1200CUT170A3S GD1200CLT170A3S |
Units |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
1800 1200 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
2400 |
A |
|
IF |
Diode Continuous Forward Current @ TC=80℃ |
1200 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
2400 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175℃ |
6.52 |
kW |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
Mounting Torque |
Signal Terminal Screw:M4 |
1.8 to 2.1 |
|
|
Power Terminal Screw:M8 |
8.0 to 10 |
N.m |
|
|
Mounting Screw:M6 |
4.25 to 5.75 |
|
