Name: GD1200SGT120A3S, IGBT module
Brand: E-To
SKU: 00176
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1200V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Low inductance case

 Fast & soft reverse recovery anti-parallel FWD

 AlSiC baseplate for high power cycling capability

 AlN substrate for low thermal resistance

Typical Applications

 High Power Converters

 Motor Drivers

 AC Inverter Drives

Absolute Maximum Ratings TC=25℃ unless otherwise noted

Symbol	Description	GD1200SGT120A3S	Units
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25℃ @ TC=80℃	2100 1200	A
ICM	Pulsed Collector Current tp=1ms	2400	A
IF	Diode Continuous Forward Current	1200	A
IFM	Diode Maximum Forward Current tp=1ms	2400	A
PD	Maximum Power Dissipation @ Tj=175℃	7.61	kW
Tjmax	Maximum Junction Temperature	175	℃
TSTG	Storage Temperature Range	-40 to +125	℃
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V
Mounting Torque	Signal Terminal Screw:M4	1.8 to 2.1
	Power Terminal Screw:M8	8.0 to 10	N.m
	Mounting Screw:M6	4.25 to 5.75

Review

GD1200SGT120A3S, IGBT module