Name: GD1200SGL330A4S, IGBT module
Brand: E-To
SKU: 00179
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

3300V

Description Drawing

Features

 Low VCE(sat) SPT IGBT technology

 Low switching losses

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 AlSiC baseplate for high power cycling capability

 AlN substrate for low thermal resistance

 High reliability package

Typical Applications

 High Power Converter

 Wind Power

 Traction Drive

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	3300	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	2300 1200	A
ICM	Pulsed Collector Current tp=1ms	2400	A
PD	Maximum Power Dissipation @ Tj=150oC	14.71	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	3300	V
IF	Diode Continuous Forward Current	1200	A
IFM	Diode Maximum Forward Current tp=1ms	2400	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	150	oC
Tjop	Operating Junction Temperature	-40 to +125	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	6000	V
VISO	Partial Discharge Extinction Voltage IEC1287,RMS,f=50Hz,QPD≤10pC	2600	V

Review

GD1200SGL330A4S, IGBT module