Name: GD1200SGT170C3S, IGBT module
Brand: E-To
SKU: 00178
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1700V

Description Drawing

Features

 Low VCE(sat) trench IGBT technology

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Low inductance case

 Fast & soft reverse recovery anti-parallel FWD External Connection(to be done)

 Isolated copper baseplate using DBC technology Equivalent Circuit Schematic

Typical Applications

 AC inverter drives mains 575-750V AC

 Public transport (auxiliary syst.)

 Wind turbines

Absolute Maximum Ratings TC=25℃ unless otherwise noted

Symbol	Description	GD1200SGT170C3S	Units
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	@ TC=25℃ @ TC=80℃	2000	A
IC	@ TC=25℃ @ TC=80℃	1200	A
ICM(1)	Pulsed Collector Current tp= 1ms	2400	A
IF	Diode Continuous Forward Current	1200	A
IFM	Diode Maximum Forward Current	2400	A
PD	Maximum power Dissipation @ Tj=150℃	7353	W
Tj	Maximum Junction Temperature	-40 to +150	℃
TSTG	Storage Temperature Range	-40 to +125	℃
VISO	Isolation Voltage RMS,f=50Hz,t=1min	3400	V
Mounting	Signal Terminal Screw:M4	1.8 to 2.1
Mounting	Power Terminal Screw:M8	8.0 to 10	N.m
Torque	Mounting Screw:M6	4.25 to 5.75

Review

GD1200SGT170C3S, IGBT module