Name: GD1400HFX120P2SA, IGBT module
Brand: E-To
SKU: 00180
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1200V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Maximum junction temperature 175o C

 Low inductance case

 Isolated copper baseplate using DBC technology

 High power and thermal cycling capability

Typical Applications

 High Power Converter

 Solar Power

 Hybrid and Electric Vehicle

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	2286 1400	A
ICM	Pulsed Collector Current tp=1ms	2800	A
PD	Maximum Power Dissipation @ Tj=175oC	7.77	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	1400	A
IFM	Diode Maximum Forward Current tp=1ms	2800	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +150	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

Review

GD1400HFX120P2SA, IGBT module