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Features
l . Low VCE(sat) Trench IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175oC
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Uninterruptible power supply
l . Inductive heating
l . Welding machine
IGBT
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=100oC |
232 150 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
829 |
W |
Diode
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=100oC |
232 150 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
829 |
W |
Module
