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Features
l . NPT IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Rugged with ultrafast performance
l . Square RBSOA
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Electrical welder
l . SMPS
l . Inductive heating
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD150HFU60C1S |
Unit |
|
VCES |
Collector-Emitter Voltage |
600 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
200 150 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
300 |
A |
|
IF |
Diode Continuous Forward Current |
150 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
300 |
A |
|
PD |
Maximum Power Dissipation @ Tj=150℃ |
558 |
W |
|
Tjmax |
Maximum Junction Temperature |
150 |
℃ |
|
Tjop |
Operating Junction Temperature |
-40 to +125 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
M |
Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 |
2.5 to 5.0 3.0 to 5.0 |
N.m |
|
G |
Weight of Module |
150 |
g |
