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Features
l . Low VCE(sat) SPT+ IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . AC Inverter Drives
l . Uninterruptible Power Supply
l . Wind Turbines
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1600SGL170A3SN |
Unit |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
@ TC=100℃ |
3100 |
A |
|
1600 |
|||
|
ICM(1) |
Pulsed Collector Current tp= 1ms |
3200 |
A |
|
IF |
Diode Continuous Forward Current |
1600 |
A |
|
IFM |
Diode Maximum Forward Current |
3200 |
A |
|
PD |
Maximum power Dissipation @ Tj=175℃ |
15.0 |
kW |
|
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
Mounting |
Signal Terminal Screw:M4 |
1.8 to 2.1 |
|
|
Power Terminal Screw:M8 |
8.0 to 10 |
N.m |
|
|
Torque |
Mounting Screw:M6 |
4.25 to 5.75 |
|
