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Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD1600SGT170C3S |
Units |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
2400 |
A |
|
1600 |
|||
|
ICM(1) |
Pulsed Collector Current tp= 1ms |
3200 |
A |
|
IF |
Diode Continuous Forward Current |
1600 |
A |
|
IFM |
Diode Maximum Forward Current |
3200 |
A |
|
PD |
Maximum power Dissipation @ Tj=150℃ |
8.93 |
kW |
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
Tj |
Maximum Junction Temperature |
150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value, Diode |
VR=0V, t=10ms, Tj=125℃ |
334 |
kA2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
3400 |
V |
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M8 |
1.8 to 2.1 8.0 to 10 |
N.m |
|
Mounting Screw:M6 |
4.25 to 5.75 |
N.m |
