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600V-650V

GD200HFK60C2S, IGBT module

IGBT module,600V/200A 2 in one-package,starpower
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Description Drawing

Features

. High short circuit capability

. 10μs short circuit capability

. VCE(sat) with positive temperature coefficient

. Latch-up free

. Low inductance case

. Fast & soft reverse recovery anti-parallel FWD

. Isolated copper baseplate using DBC technology

Typical Applications

. UPS

. Switching mode power supplies

. Electronic welders

Absolute Maximum Ratings TC=25 unless otherwise noted

 

Symbol

Description

GD200HFK60C2S

Units

VCES

Collector-Emitter Voltage

600

V

VGES

Gate-Emitter Voltage

±20V

V

IC

Collector Current    @ TC=25

@ TC=80

260

A

200

ICM(1)

Pulsed Collector Current    tp=1ms

400

A

IF

Diode Continuous Forward Current

200

A

IFM

Diode Maximum Forward Current

400

A

PD

Maximum power Dissipation @ Tj=150

1042

W

TSC

Short Circuit Withstand Time @ Tj=125

10

μs

Tj

Operating Junction Temperature

-40 to +150

TSTG

Storage Temperature Range

-40 to +125

I2t-value,

Diode

VR=0V, t=10ms, Tj=125

4900

A2s

VISO

Isolation Voltage RMS, f=50Hz, t=1min

2500

V

Mounting

Torque

Power Terminal Screw:M6

2.5 to 5.0

N.m

Mounting Screw:M6

3.0 to 6.0

N.m



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