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Features
l . Low VCE(sat) trench IGBT technology
l . 5μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175℃
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Solar power
l . UPS
l . 3-Level-Applications
IGBT T1 T2 T3 T4 TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD200MLT60C2S |
Units |
|
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
600 |
V |
|
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
265 200 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
400 |
A |
|
Ptot |
Total Power Dissipation @ Tj=175℃ |
644 |
W |
DIODE D1 D2 D3 D4 TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD200MLT60C2S |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
600 |
V |
|
IF |
DC Forward Current TC=80℃ |
200 |
A |
|
IFRM |
Repetitive Peak Forward Current tp=1ms |
400 |
A |
DIODE D5 D6 TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD200MLT60C2S |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
600 |
V |
|
IF |
DC Forward Current TC=80℃ |
200 |
A |
