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Features
l . Low VCE(sat) trench IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Low inductance case
l . AlSiC baseplate for high power cycling capability
l . AlN substrate for low thermal resistance
Typical Applications
l . AC inverter drives mains 575-750VAC
l . Public transport (auxiliary syst.)
Absolute Maximum Ratings TC=25℃ unless otherwise note
|
Symbol |
Description |
GD2400SGT170A4S |
Units |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
3450 |
A |
|
2400 |
|||
|
ICM(1) |
Pulsed Collector Current tp= 1ms |
4800 |
A |
|
IF |
Diode Continuous Forward Current |
2400 |
A |
|
IFM |
Diode Maximum Forward Current |
4800 |
A |
|
PD |
Maximum power Dissipation @ Tj=150℃ |
16 |
kW |
|
TSC |
Short Circuit Withstand Time @ Tj=125℃ |
10 |
μs |
|
Tj |
Maximum Junction Temperature |
150 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value, Diode |
VR=0V,t=10ms,Tj=125℃ |
780 |
kA2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
|
Mounting Torque |
Power Terminal Screw:M4 Power Terminal Screw:M8 |
1.8 to 2.1 8.0 to 10 |
N.m |
|
Mounting Screw:M6 |
4.25 to 5.75 |
N.m |
