IGBTTC=25℃ unless otherwise noted
Symbol |
Description |
Value |
Unit |
V CES |
Collector-Emitter Voltage |
1200 |
V |
VGEs |
Gate-Emitter Voltage |
±20 |
V |
Ic |
Collector Current @Tc=25℃ Tc=90℃ |
451 300 |
A |
CM |
Pulsed Collector Current t,=1ms |
600 |
A |
PD |
Maximum Power Dissipation @T=175℃ |
1428 |
W |
DIODE TC=25℃ unless otherwise noted
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
LF |
Diode Continuous Forward Current |
300 |
A |
FM |
Diode Maximum Forward Current tp=1ms |
600 |
A |
IGBT Module
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
℃ |
Tjop |
Operating Junction Temperature, |
-40 to +150 |
℃ |
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
TISD |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |