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Features
l . Low VCE(sat) trench IGBT technology
l . 6μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175℃
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Solar power
l . UPS
l . 3-level-application
IGBT T1 T4 TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD300MLT60B3ST |
Unit |
|
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
650 |
V |
|
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=70℃ |
400 300 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
600 |
A |
|
Ptot |
Total Power Dissipation @ Tj=175℃ |
857 |
W |
Diode D1 D4 TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD300MLT60B3ST |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
650 |
V |
|
IF |
DC Forward Current |
200 |
A |
|
IFRM |
Repetitive Peak Forward Current tp=1ms |
400 |
A |
IGBT T2 T3 TC=25℃ unless otherwise noted
