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Features
l Low VCE(sat) Trench IGBT technology
l Low switching loss
l 6μs short circuit capability
l VCE(sat) with positive temperature coefficient
l Maximum junction temperature 175℃
l Fast & soft reverse recovery anti-parallel FWD
l Isolated heatsink using DBC technology
Typical Applications
l Inverter for motor drive
l AC and DC servo drive amplifier
l Uninterruptible power supply
IGBT
|
Symbol |
Description |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage |
650 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25oC @ TC=90oC |
46 30 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
60 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
123 |
W |
Diode
|
Symbol |
Description |
Value |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
650 |
V |
|
IF |
Diode Continuous Forward Current |
30 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
60 |
A |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
