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Features
l . NPT IGBT technology
l . 10μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Rugged with ultrafast performance
l . Square RBSOA
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Electrical welder
l . SMPS
l . Inductive heating
IGBTTC=25℃ unless otherwise noted
|
Symbol |
Description |
GD30PIK60C5S |
Units |
|
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
600 |
V |
|
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
48 30 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
60 |
A |
|
Ptot |
Total Power Dissipation @ Tj=150℃ |
153 |
W |
DIODE TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD30PIK60C5S |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
600 |
V |
|
IF |
DC Forward Current @ TC=80℃ |
30 |
A |
|
IFRM |
Repetitive Peak Forward Current tp=1ms |
60 |
A |
IGBT Module
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
|
|
V |
|
LCE |
Stray Inductance |
|
60 |
|
nH |
|
RCC’+EE’ RAA’+CC ’ |
Module Lead Resistance,Terminal to Chip @ TC=25℃ |
|
4.00 2.00 |
|
mΩ |
