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600V-650V

GD450HFX65C6S, IGBT module

IGBT module,650V/450A 2 in one-package,starpower
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Description Drawing
Features
Low VCE(sat) Trench IGBT technology
VCE(sat) with positive temperature coefficient
6μs short circuit capability
Maximum junction temperature 175o C
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply

IGBTTC=25℃ unless otherwise noted

Symbol

Description

Values

Unit

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25oC

@ TC=55oC

536

450

A

ICM

Pulsed Collector Current  tp=1ms

900

A

PD

Maximum Power Dissipation  @ T =175oC

1190

W

DIODE TC=25℃ unless otherwise noted

Symbol

Description

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Diode Continuous Forward Current

450

A

IFM

Diode Maximum Forward Current  tp=1ms

900

A

IGBT Module

Symbol

Description

Values

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

2500

V






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