Name: GD650HFX170P1S, IGBT module
Brand: E-To
SKU: 00170
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1700V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Maximum junction temperature 175o C

 Enlarged Diode for regenerative operation

 Isolated copper baseplate using DBC technology

 High power and thermal cycling capability

Typical Applications

 High Power Converter

 Wind and Solar Power

 Traction Drive

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	1073 650	A
ICM	Pulsed Collector Current tp=1ms	1300	A
PD	Maximum Power Dissipation @ Tj=175oC	4.2	kW

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	650	A
IFM	Diode Maximum Forward Current tp=1ms	1300	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +150	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

Review

GD650HFX170P1S, IGBT module