Name: GD75HFT170C1S, IGBT module
Brand: E-To
SKU: 00130
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1700V

Description Drawing

Features

 Low VCE(sat) trench IGBT technology

 Low switching losses

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Low inductance case

 Fast & soft reverse recovery anti-parallel FWD

 Isolated copper baseplate using DBC technology

Typical Applications

 AC inverter drives mains 575-750V AC

 Public transport (auxiliary syst.)

Absolute Maximum Ratings TC=25℃ unless otherwise noted

Symbol	Description	GD75HFT170C1S	Units
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25℃ @ TC=80℃	140	A
IC	Collector Current @ TC=25℃ @ TC=80℃	75	A
ICM	Pulsed Collector Current tp=1ms	150	A
IF	Diode Continuous Forward Current	75	A
IFM	Diode Maximum Forward Current	150	A
PD	Maximum Power Dissipation @ Tj= 175℃	600	W
TSC	Short Circuit Withstand Time @ Tj=125℃	10	μs
Tjmax	Maximum Junction Temperature	175	℃
Tjop	Operating Junction Temperature	-40 to +150	℃
TSTG	Storage Temperature Range	-40 to +125	℃
I2t-value,Diode	VR=0V,t=10ms,Tj=125℃	1050	A2s
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V
Mounting Torque	Power Terminal Screw:M5	2.5 to 5.0	N.m
Mounting Torque	Mounting Screw:M6	3.0 to 5.0	N.m

Review

GD75HFT170C1S, IGBT module