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Features
l . Low VCE(sat) trench IGBT technology
l . Low switching losses
l . 5μs short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175℃
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . UPS
l . Switching mode power supplies
l . Electronic welders
Absolute Maximum Ratings TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD75HFT60C1S |
Units |
|
VCES |
Collector-Emitter Voltage |
600 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC=80℃ |
115 75 |
A |
|
ICM(1) |
Pulsed Collector Current tp=1ms |
150 |
A |
|
IF |
Diode Continuous Forward Current |
75 |
A |
|
IFM |
Diode Maximum Forward Current |
150 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175℃ |
294 |
W |
|
TSC |
Short Circuit Withstand Time @ Tj=150℃ |
5 |
μs |
|
Tj |
Maximum Junction Temperature |
175 |
℃ |
|
TSTG |
Storage Temperature Range |
-40 to +125 |
℃ |
|
I2t-value,Diode |
VR=0V,t=10ms,Tj=125℃ |
450 |
A2s |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
2500 |
V |
|
Mounting Torque |
Power Terminal Screw:M5 |
2.5 to 5.0 |
N.m |
|
Mounting Screw:M6 |
|
N.m |
