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IGBTTC=25℃ unless otherwise noted
|
Symbol |
Description |
GD75PIL120C6S_G4 |
Units |
|
VCES |
Collector-Emitter Voltage @ Tj=25℃ |
1200 |
V |
|
VGES |
Gate-Emitter Voltage @ Tj=25℃ |
±20 |
V |
|
IC |
Collector Current @ TC=25℃ @ TC= 100℃ |
150 75 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
150 |
A |
|
Ptot |
Total Power Dissipation @ Tj=175℃ |
714 |
W |
DIODE TC=25℃ unless otherwise noted
|
Symbol |
Description |
GD75PIL120C6S_G4 |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage @ Tj=25℃ |
1200 |
V |
|
IF |
DC Forward Current |
75 |
A |
|
IFRM |
Repetitive Peak Forward Current tp=1ms |
150 |
A |
IGBT Module
|
Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
|
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
|
|
V |
|
LCE |
Stray Inductance |
|
60 |
|
nH |
|
RCC’+EE’ RAA’+CC ’ |
Module Lead Resistance,Terminal to Chip @ TC=25℃ |
|
4.00 2.00 |
|
mΩ |
