Name: GD75PIX120C6SN, IGBT module
Brand: E-To
SKU: 00127
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1200V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 10μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Maximum junction temperature 175o C

 Low inductance case

 Fast & soft reverse recovery anti-parallel FWD

 Isolated copper baseplate using DBC technology

Typical Applications

 Inverter for motor drive

 AC and DC servo drive amplifier

 Uninterruptible power supply

IGBTTC=25℃ unless otherwise noted

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=95oC	114 75	A
ICM	Pulsed Collector Current tp=1ms	150	A
PD	Maximum Power Dissipation @ T =175oC	365	W

DIODE TC=25℃ unless otherwise noted

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1200	V
IF	Diode Continuous Forward Current	75	A
IFM	Diode Maximum Forward Current tp=1ms	150	A

IGBT Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature(inverter,brake) Maximum Junction Temperature (rectifier)	175 150	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	2500	V

Review

GD75PIX120C6SN, IGBT module