Name: GD75TUX65F1S, IGBT module
Brand: E-To
SKU: 00126
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

600V-650V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 6μs short circuit capability

 VCE(sat) with positive temperature coefficient

 Maximum junction temperature 175oC

 Fast & soft reverse recovery anti-parallel FWD

 Isolated heatsink using DBC technology

Typical Applications

 Solar power

 UPS

 3-level-application

T2,T3 IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	650	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=85oC	108 75	A
ICM	Pulsed Collector Current tp=1ms	150	A
PD	Maximum Power Dissipation @ Tj=175oC	281	W

D2,D3 Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	650	V
IF	Diode Continuous Forward Current	30	A
IFM	Diode Maximum Forward Current tp=1ms	60	A

D1,D4 Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	650	V
IF	Diode Continuous Forward Current	75	A
IFM	Diode Maximum Forward Current tp=1ms	150	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC

Review

GD75TUX65F1S, IGBT module