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1700V

GD800CUT170A3S , IGBT module

IGBT module,1700V/800A 2 in one-package,starpower
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Description Drawing

Features

. Low VCE(sat) Trench IGBT technology

. 10μs short circuit capability

. VCE(sat) with positive temperature coefficient

. Low inductance case

. Fast & soft reverse recovery anti-parallel FWD

. AlSiC baseplate for high power cycling capability

. AlN substrate for low thermal resistance

Typical Applications

. High Power Converters

. Motor Drives

. Wind Turbines

Absolute Maximum Ratings TC=25 unless otherwise noted

Symbol

Description

GD800CUT170A3S GD800CLT170A3S

Units

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current  @ TC=25

@ TC=80

1400

800

A

ICM

Pulsed Collector Current  tp=1ms

1600

A

IF

Diode Continuous Forward Current

@ TC=80

800

A

IFM

Diode Maximum Forward Current  tp=1ms

1600

A

PD

Maximum Power Dissipation  @ Tj=175

5.03

kW

Tjmax

Maximum Junction Temperature

175

TSTG

Storage Temperature Range

-40 to +125

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

Mounting Torque

Signal Terminal Screw:M4

1.8 to 2.1

 

Power Terminal Screw:M8

8.0 to 10

N.m

Mounting Screw:M6

4.25 to 5.75





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