Name: GD80TLQ120F1S, IGBT module
Brand: E-To
SKU: 00132
Availability: InStock
Rating: 5 (1 reviews)

Products

Contact Us: +86 18514550680; [email protected]; WhatsApp:+86 18514550680; 18 Jingjia Rd, Yanqi Town, Huairou District, Beijing

1200V

Description Drawing

Features

 Low VCE(sat) Trench IGBT technology

 Low switching loss

 VCE(sat) with positive temperature coefficient

 High short circuit capability

 Maximum junction temperature 175oC

 Fast & soft reverse recovery anti-parallel FWD

 Isolated heatsink using DBC technology

Typical Applications

 Solar power

 UPS

 3-level-application

T1,T2 IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=90oC	110 80	A
ICM	Pulsed Collector Current tp=1ms	160	A
PD	Maximum Power Dissipation @ Tj=175oC	450	W

T3,T4 IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC=65oC	93 75	A
ICM	Pulsed Collector Current tp=1ms	150	A
PD	Maximum Power Dissipation @ T =175oC	231	W

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

Review

GD80TLQ120F1S, IGBT module