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Features
l . Low VCE(sat) Trench IGBT technology
l . Short circuit capability
l . VCE(sat) with positive temperature coefficient
l . Maximum junction temperature 175oC
l . Low inductance case
l . Fast & soft reverse recovery anti-parallel FWD
l . Isolated copper baseplate using DBC technology
Typical Applications
l . Hybrid and electric vehicle
l . Inverter for motor drive
l . Uninterruptible power supply
IGBT
|
Symbol |
Description |
Values |
Unit |
|
VCES |
Collector-Emitter Voltage |
1200 |
V |
|
VGES |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current @ TC=90oC |
900 |
A |
|
ICM |
Pulsed Collector Current tp=1ms |
1800 |
A |
|
PD |
Maximum Power Dissipation @ Tj=175oC |
3409 |
W |
Diode
|
Symbol |
Description |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
1200 |
V |
|
IF |
Diode Continuous Forward Current |
900 |
A |
|
IFM |
Diode Maximum Forward Current tp=1ms |
1800 |
A |
|
IFSM |
Surge Forward Current tp=10ms @ Tj=25oC @ Tj=150oC |
4100 3000 |
A |
|
I2t |
I2t-value,tp=10ms @ Tj=25oC @ Tj=150oC |
84000 45000 |
A2s |
Module
|
Symbol |
Description |
Value |
Unit |
|
Tjmax |
Maximum Junction Temperature |
175 |
oC |
|
Tjop |
Operating Junction Temperature |
 
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