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Main Characteristics
l Three-phase fully controlled bridge module for HEV/EV
l Blocking voltage 750V
l Continuous DC collector current 450A
l Low Vcesat, Vcesat=1.2V(Type)
l Low Switching Losses
l Low Qg and Crss
l Low Inductive Design
l RoHS Compliant
Typcial Applications
l Hybrid Electrical Vehicles (H)EV
l Automotive Applications
l Motor Drives
Good Design
l 4.2kV DC 1sec Insulation for safety
l Compact design
l Integrated NTC temperature sensor
l Direct Cooled PinFin Base Plate
l Guiding elements for PCB and cooler assembly
l PressFIT Contact Technology
IGBT Inverter-- Maximum Rated Values
|
Symbol |
Parameter |
Conditions |
Tvj(°C) |
Value |
Unit |
||||
|
Min. |
Typ. |
Max. |
|||||||
|
VCES |
Collector-emitter Breakdown Voltage |
|
25 |
750 |
|
|
V |
||
|
ICN |
Implemented collector current |
|
25 |
|
|
820 |
A |
||
|
IC nom |
*1 |
Continuous DC collector current |
TF = 80°C |
175 |
|
|
450 |
A |
|
|
ICRM |
Repetitive peak collector current |
tP = 1 ms |
|
|
|
1640 |
A |
||
|
Ptot |
*1 |
Total power dissipation |
TF = 75°C |
175 |
|
|
710 |
W |
|
|
VGES |
Gate-Emitter peak voltage |
|
|
-20 |
|
20 |
V |
||
|
Tvj |
Junction temperature |
|
|
-40~175 |
℃ |
||||
