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IGCT

YT-ASC40L6500IC

Asymmetric 6500V/4000A Integrated Gate- Commutated Thyristor (IGCT)
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Description Drawing

Typical Applications

Modular multilevel converter

Static var compensator

High power converter

Motor drive equipment

Flexible transmission system

Features

High withstand current

With self turn-off capacity

Failure short circuit mode

Low operation losses

 Key Parameters

Condition

Value

Unit

V DRM

6500

V

ITGQM

4000

A

ITSM

26

KA

VTO

1.88

V

rT

0.56

VDClink

4000

V

Blocking/On-State Data

Symbol

Parameter

Conditions

Min

Typical

Max

 

V DRM 

Rep. peak off-state voltage

T VJ=125℃, I D≤I DRM, t p=10ms

-

-

4500

V

I DRM

Rep. peak off-state current

T VJ=125℃, V D=V DRM, t p=10ms

-

-

50

mA

dv /dt

Critical rate of rise of anode voltage

T VJ=125℃, V D=0.67VDRM

-

-

1000

V/μs

V DClinK

Intermediate DC voltage

Permanent DC voltage for 100 FIT failure rate of GCT

-

-

4000

V

V RRM

Reverse voltage

\

-

-

17

V

I DC

Max. RMS on-state current

T C = 85, DC, Double side cooled 

-

-

2000

A

I TSM

I 2 t 

Max. peak non-repetitive surge on- state current

Limiting load integral

T VJ = 125, since half wave, 10ms,

V D=V R=0

-

-

-

-

26

338

KA

104A2 s

V TM 

On-state voltage

T VJ = 125℃, I T =4000A

-

3.75

4.11

V

V TO 

r T 

Threshold voltage

slope resistance

T VJ = 125℃, I T = 1000…4000A

-

-

1.88

0.55

V

mΩ







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