Features
l 1200VTrench Gate & Field Stop Structure
l High Switching Frequency
l Low Switching Loss
l High Reliability
Typical Applications
l Energy storage systems
l Solar Application
l Three-level applications
IGBT,T1/T2/T3/ T4
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V,Tvj=25°C |
1200 |
V |
DC Collector Current |
I C |
TC=TBD°C, Tvj,max=175°C |
450 |
A |
Peak Collector Current |
ICM |
tp limited by Tvjtop |
900 |
A |
Gate-Emitter Voltage |
VGES |
|
±20 |
V |
Maximum Junction Temperature |
Tvj, max |
|
175 |
°C |
Operating Junction Temperature |
Tvj, op |
|
-40~150 |
°C |
Storage Temperature Range |
Tstg |
|
-40~125 |
°C |
FRD ,D2/D3
Parameter |
Symbol |
Conditions |
Value |
Unit |
Repetitive peak reverse voltage |
VRRM |
Tvj=25°C |
1200 |
V |
Continuous DC forward current |
IF |
|
450 |
A |
Type |
VCES |
Ic@Tc=100℃,Tvj=Tvjmax |
Vce(sat) |
Vf |
Tvjopmax |
Package |
YT450TN12A3F5-E3F |
1200V |
450A |
2.0 |
2.35 |
150℃ |
E3F |
YT450B12C6F4 |
1200V |
450A |
2.0 |
2.0 |
150℃ |
62mm |
YT450B12E6K4 |
1200V |
450A |
1.75 |
2.25 |
150℃ |
ED3 |
YT600B12E6K4 |
1200V |
600A |
1.75 |
1.75 |
150℃ |
ED3 |
YT900B12E6K7 |
1200V |
900A |
1.65 |
1.9 |
150℃ |
ED3 |
YT200B17E6K4 |
1700V |
200A |
1.8 |
1.9 |
150℃ |
ED3 |
YT300B17E6K4 |
1700V |
300A |
1.8 |
2.0 |
150℃ |
ED3 |
YT450B17E6K4 |
1700V |
450A |
1.8 |
2.0 |
150℃ |
ED3 |
YT600B17E6K4 |
1700V |
600A |
1.8 |
2.2 |
150℃ |
ED3 |
YT900B17E6K7 |
1700V |
900A |
1.95 |
2.1 |
175℃ |
ED3 |