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YT450TN12A3F5, IGBT module

1200V 450A IGBT Module, E3F Package, with FWD
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Description Drawing List of this series

Features

1200VTrench Gate & Field Stop Structure

High Switching Frequency

Low Switching Loss

High Reliability

Typical Applications

Energy storage systems

Solar Application

Three-level applications

IGBT,T1/T2/T3/ T4

 Parameter

Symbol

Conditions

 Value

 Unit

Collector-Emitter Voltage

VCES

VGE=0V,Tvj=25°C

1200

V

DC Collector Current

I C

TC=TBD°C, Tvj,max=175°C

450

A

Peak Collector Current

ICM

tp  limited by Tvjtop

900

A

Gate-Emitter Voltage

VGES

 

±20

V

Maximum Junction Temperature

Tvj, max

 

175

°C

Operating Junction Temperature

Tvj, op

 

-40~150

°C

Storage Temperature  Range

Tstg

 

-40~125

°C

FRD ,D2/D3

Parameter

Symbol

Conditions

Value

 Unit

Repetitive peak reverse voltage

VRRM

Tvj=25°C

1200

V

Continuous DC forward current

IF

 

450

A

Type

VCES

Ic@Tc=100℃,Tvj=Tvjmax

Vce(sat)

Vf

Tvjopmax

Package

YT450TN12A3F5-E3F

1200V

450A

2.0

2.35

150℃

E3F

YT450B12C6F4

1200V

450A

2.0

2.0

150℃

62mm

YT450B12E6K4

1200V

450A

1.75

2.25

150℃

ED3

YT600B12E6K4

1200V

600A

1.75

1.75

150℃

ED3

YT900B12E6K7

1200V

900A

1.65

1.9

150℃

ED3

YT200B17E6K4

1700V

200A

1.8

1.9

150℃

ED3

YT300B17E6K4

1700V

300A

1.8

2.0

150℃

ED3

YT450B17E6K4

1700V

450A

1.8

2.0

150℃

ED3

YT600B17E6K4

1700V

600A

1.8

2.2

150℃

ED3

YT900B17E6K7

1700V

900A

1.95

2.1

175℃

ED3

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